PLANNING AND LEADERSHIP FOR A BETTER WORLD
PLANNING AND LEADERSHIP FOR A BETTER WORLD Proteins—long chains of linked amino acids—exist in three dimensions. Their folded, twisted and kinked shapes—emerging as the result of attraction and repulsion among component molecules—are critical in many cases to biological function. DNA—precursor to proteins, its native shape the classic double-helix—can also be folded, and in recent years, a battery of techniques and software tools have emerged to facilitate creation of nanostructures using DNA as raw material: a technique called "DNA origami."
Researchers have learned to use DNA origami to make millions of precise copies of complex DNA structures in solution. Harder to find are methods of positioning those structures accurately on surfaces so they can do useful work—for example, so they can act as scaffolds for deposition and adhesion of carbon nanotubes, silicon nanowires or quantum dots in complex circuit patterns on silicon oxide and other technologically useful substrates.
Since DNA nanostructures can be created to offer binding-site resolutions down to around 6nm, learning how to use them to template self-assembling circuits on silicon and other substrates offers huge potential upsides in production/cost and component density. But until now, it was impossible to position these structures on surfaces reliably without using interventive techniques to physically move and restrain the molecules—a process with its own complications, cost factors and limits of resolution.
In early August, however, CalTech and IBM Research jointly announced a breakthrough in using electron-beam lithography and dry oxidative etching techniques to create "sticky" areas on substrates to attract and bind DNA nanostructures. The article on this advance will appear in Nature and Nanotechnology’s September issue.
The IBM/CalTech innovation has the potential to eventually enable the fluent combination of existing techniques for circuit-detailing with a battery of multi-pass molecular self-assembly processes in order to create circuits of density well below the current 22nm boundary possible with today’s methods.
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